Defect generation in crystalline silicon irradiated with high energy particles
نویسندگان
چکیده
منابع مشابه
Defect Generation in Crystalline Silicon Irradiated with High Energy Particles
High resistivity silicon with different concentrations of the impurities oxygen and carbon were irradiated with neutrons and charged particles. The DLTS method is used to determine the defect parameters. During irradiation of silicon with particles lattice atoms are displaced and the primary defects silicon interstitials and vacancies form the impurity defects Ci, CiCs, CiOi and V Oi. In the de...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
سال: 2002
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(01)00886-2